SanDisk has announced, in collaboration with Toshiba corporation, the development of multi-level cell NAND flash memory, using 32-nanometer (nm) process technology to produce a 32-gigabit 3-bits-per-cell (X3) memory chip.

The technology is due to be developed in the second half of 2009 and is said to be ideally suited to microSD applications. What’s more is that it’s expected to bring a drop in costs of production of both memory cards in general and Solid State Drives.